Automotive Power
SPOC+: The Magic of Integration
The complexity and density of electronic modules is constantly rising as they are challenged to support more and more loads and functions. Car manufacturers, automotive suppliers and industry players are thus looking for modular, scalable solutions that they can adapt to varying requirements and reuse in different proje ...
Wireless Communication
New 1000W LDMOS Transistor Offers Rugged Performance in the 960MHz to 1215MHz Avionics Frequency Band
Infineon's new 1000W LDMOS transistor is designed for avionics applications in the 965 MHz to 1215 MHz frequency band. It offers over 1000W peak output power capability with 15dB of gain and 60 percent efficiency (under 100µsec, 10 percent DC pulse conditions and 1030MHz).
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Power Semiconductors
Ease of Use Meets Energy Efficiency with Optimized 600V CoolMOS™ P6 Power MOSFET
CoolMOS™ P6 is Infineon’s seventh generation of high-voltage power MOSFETs to be designed in line with the revolutionary superjunction (SJ) principle.
The new CoolMOS™ P6 series combines Infineon's expertise as the leading SJ MOSFET supplier with its innovative strengths in energy efficienc ...
Power Modules
EconoPACK™ 4 - The World Standard for 3-Level Applications
EconoPACK™ 4 is a portfolio of optimized modules for 3-level applications that require a rugged design, high efficiency levels and lower harmonics. These can range from uninterruptible power supplies and solar inverters to high-speed drives. EconoPACK™4 modules can be used to create a single phas ...
Power Semiconductors
Evaluation Boards for High-Speed Industrial CAN Transceivers
CAN is becoming an increasingly attractive option for industrial applications. Infineon currently offers three transceiver devices for the physical layer in high speed data transmission: IFX1050G, IFX1050G VIO (for 3.3V logic I/Os) and IFX1040SJ (with wake-up capability). ...
Newsflash
Press Releases
Infineon präsentiert neue Leistungstransistoren 650-V-CoolMOS C6/E6 für höchste Effizienz und einfache Kontrolle des Schaltverhaltens in Schaltnetzteilen
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