Power Semiconductors
2G thinQ!™ Silicon Carbide Schottky Diodes Now Available in TO-220 FullPAK
Comparison of the thermal resistance offered by standard Infineon TO220, Infineon
TO220 FullPAK and competitor FullPAK product
Silicon Carbide (SiC) is an ideal semiconductor material for power electronic applications, clearly outperforming Si and GaN power devices. Especially in the 600V upwards range, it offers benchmark switching behavior (virtually loss-less) and excellent conduction performance. These properties enable best-in-class efficiency and reduced complexity in SMPS solutions.
In addition, as the diameter wafer of SiC devices increases, this previously exotic and expensive technology is becoming much more affordable.
Our new FullPAK solution combines the high electrical performance of Infineon second generation (2G) SiC Schottky diodes with the advantages of a fully isolated package, without significant impact on thermal behavior compared with standard TO-220 solutions. The patented diffusion soldering technique enables a clear reduction in “chip-to-lead frame” thermal resistance and positions Infineon FullPAK products at the top of their class for performance.
Additionally, Infineon offers the industry´s broadest portfolio in this package with current ratings up to 6A. The graph shows the same junction-case thermal resistance for Infineon products with 2 and 3A, and slightly higher values for the other current ratings. This small difference is generally compensated for in the final design assembly with an isolation foil for the standard TO-220 package. Our patented diffusion soldering technique gives these 2G thinQ!™ products a clear lead on the competition (which only offers products up to 3A).
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Power Semiconductors
3G thinQ!™ Silicon Carbide Schottky Diodes Make Improved Efficiency More Affordable
Silicon Carbide (SiC) is an ideal semiconductor material for power electronic applications, clearly outperforming Si and GaN power devices. E ...
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