Power Semiconductors
3G thinQ!™ Silicon Carbide Schottky Diodes Make Improved Efficiency More Affordable
An evaluation example of a 1000W input voltage range CCM PFC application
Silicon Carbide (SiC) is an ideal semiconductor material for power electronic applications, clearly outperforming Si and GaN power devices. Especially in the 600V upwards range, it offers benchmark switching behavior (virtually loss-less) and excellent conduction performance. These properties enable benchmark efficiency and reduced complexity in SMPS solutions. In addition, as the diameter wafer of SiC devices increases, this previously exotic and expensive technology is becoming much more affordable.
Infineon has just released its third generation (3G) of SiC Schottky diodes. The 3G thinQ!™ family offers the industry’s lowest device capacitance for any given current rating. This further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. Benefits include higher frequency designs and increased power-density solutions. In addition, reduced cooling requirements push system costs down.
Additionally, Infineon provides the industry’s broadest SiC Schottky diode portfolio, which not only includes the TO-220 package (real 2-pin version), but also the DPAK package for high-power-density surface-mount designs.
- Lower cost
- Lowest switching losses due to lowest Qc (Qrr) for any current rating in the market
- Fully surge-current stable, high reliability and ruggedness
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