Power Semiconductors

650V CoolMOS™ CFD2 With Integrated Fast Body Diode

CFD vs. CFD2 efficiency comparison in a 12V server SMPS with ZVS FB @ 100kHz topology

With the new 650V CoolMOS™ CFD2, Infineon has launched the second generation of its market-leading high-voltage CoolMOS™ MOSFET technology with integrated fast body diode. It is the first 650 HV MOS technology with integrated fast body diode on the market. The CFD2 portfolio provides all the benefits of a fast-switching SJ MOSFET while maintaining ease of use. The new 650V CoolMOS™ CFD2 succeeds the 600V CFD, raising the bar for performance. Softer commutation behavior and the resulting enhancement to EMI behavior gives this product a clear advantage over competitor products. Offering a significantly lower price than C3-based CFD technology and improved light load efficiency (due to the reduced gate charge), this product is the best choice for resonant switching applications.

Limited voltage overshoot during hard commutation - self-limiting di/dt and dv/dt Significant Qg reduction compared with C3-based CFD technology Tighter RDS(on) max to RDS(on) typ window Low switching losses due to low Qrr during repetitive commutation on body diode Low Qoss Reduced turn on and turn off delay times Easy to design in

Telecom Servers Battery chargers Solar systems HID lamp ballasts LED lights