Wireless Control
SmartLEWIS™ RX+ - TDA 5240, TDA 5235, TDA 5225 Receivers with Enhanced Sensitivity
It sounds like a contradictory combination, yet this is what is more and more requested from your receiver design: long range, low energy consumption and flexible adaption to customer requirements.
But if you think this requires high development effort and expensive additional components in your design, think again.
Our new high-sensitivity, low-power receiver family, Sma ...
Power Semiconductors
OptiMOS™ in SuperSO8
In applications such as synchronous rectifiers in SMPS systems, motor drives and DC/DC converters, high power density and high efficiency are the major driving factors. Moving from TO-220 to SuperSO8 reduces space requirements drastically and enables a huge increase in power density. Offering three times lower parasitic inductance than TO-220, SuperSO8 enables optimum switching performance and ...
Wireless Communication
New 4W, 8W and 12W Unmatched LDMOS RF Power Transistors Offer Broadband Performance from 700MHz to 2200MHz
Infineon has introduced three new unmatched LDMOS RF power transistors. These are targeted at RF power amplifiers operating in the 700MHz to 2200MHz frequency band. Available in 4W, 8W and 12W output power (P1dB) versions, these transistors offer excellent thermal performance, high gain and high efficiency. They are available in an RoHS-compliant 10-pin SON plastic package and are suitable for ...
Automotive Power
TLD 1211SJ – Linear LED Driver for Low-to-Medium-Current LEDs
The TLD 1211SJ is an integrated adjustable current source. This basic LED driver is designed to supply LEDs requiring constant brightness and extended LED lifetimes. The TLD 1211SJ idrives output currents up to 85mA. An additional external output stage increases the LED output current up to 2.5A.
Power Semiconductors
EiceDRIVER™ - 200V 3-Phase Gate Driver IC for eMobility & Low-Voltage Drives
The EiceDRIVER™ 6ED003L02-F is a 3-phase gate driver IC to control power devices such as IGBTs or MOSFETs in 3-phase systems with a blocking voltage up to 200V. Based on Silicon-On-Insulator (SOI) technology, this device is very resistant to negative transient voltages. Compared with standard m ...
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Infineon präsentiert neue Leistungstransistoren 650-V-CoolMOS C6/E6 für höchste Effizienz und einfache Kontrolle des Schaltverhaltens in Schaltnetzteilen
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