Power Semiconductors

New 1200V IGBT HighSpeed3 Family Breaks the Switching Speed Limits in Various Topologies

Trade-off diagram

The new 1200V IGBT HighSpeed3 family is custom-developed for high-frequency operation in hard- and soft-switched topologies requiring optimized power switches.

Since power density and efficiency are key parameters in both topologies, IGBT optimization is a crucial enabler in achieving these goals. IGBT is the perfect fit for applications with switching speeds above 20 kHz. Conduction losses are insignificant at these speeds and the very low tail current has the benefit of significantly optimizing switching losses.

A 4th generation emitter controlled diode offering superior ruggedness was paired with the fast-switching IGBT to further optimize diode performance and strike the right balance between switching and conduction losses.

This new family of 1200V IGBTs is optimized for high-frequency solar, USP and welding applications, offering benchmark performance and best-in-class power densities.

Compact system design and small heatsink sizes Optimized diode provides for low IGBT power dissipation when no reactive power is needed Smooth switching behavior

Solar inverters UPS systems Welding devices