Wireless Communication

New 240W to 340W LDMOS Transistors for Doherty Amplifiers

240 W to 340 W high-power transistors

Infineon has introduced a family of five new  power transistors designed enhanced for use in Doherty amplifier designs. This new family consists of transistors with output power ratings (P1dB) from 150W to 340W and available in the 1800MHz, 1900MHz and 2100MHz frequency bands. Manufactured with Infineon's latest LDMOS process technology, they offer higher gain, higher peak power, smaller packages (higher power density), and improved performance in Doherty amplifiers. Available in open-cavity packages, these transistors provide excellent reliability and consistency.

Available products:
PTFB 182503EL V1 - 240W, 1805-1880MHz, package with eared flange
PTFB 182503FL V1 - 240W, 1805-1880MHz, package with earless flange

PTFB 192503EL V1 - 240W, 1930-1990MHz, package with eared flange
PTFB 192503FL V1 - 240W, 1930-1990MHz, package with earless flange

PTFB 212503EL V1 - 240W, 2110-2170MHz, package with eared flange
PTFB 212503FL V1 - 240W, 2110-2170MHz, package with earless flange

PTFB 213004F V1 - 300W, 2110-2170MHz, package with earless flange
PTFB 183404F V1 - 340W, 1805-1880MHz, package with earless flange

Typical performance

PTFB 212503EL/FL V1
Typical single-carrier WCDMA
- Performance (2170MHz, 30V, 3GPP signal, channel bandwidth 3.84MHz, PAR=7.5dB @ 0.01% CCDF)
- Average output power = 85W
- Gain = 18dB
- Efficiency = 37%
- IMD = -33dBc

PTFB 213004F V1
Typical two-carrier WCDMA
- Performance (2170MHz, 30V, 3GPP signal, channel bandwidth = 3.84MHz, PAR=8dB @ 0.01% CCDF)
- Average output power = 65W
- Gain = 18dB
- Efficiency = 27%
- IMD = -35dBc

Broadband I/O matching High gain Wide VBW Designed for use in Doherty amplifier architectures Enhanced for use in DPD error correction systems Low thermal resistance Integrated ESD protection Lead-free, RoHS-compliant Reference circuits available

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