Wireless Communication

New 4W, 8W and 12W Unmatched LDMOS RF Power Transistors Offer Broadband Performance from 700MHz to 2200MHz

4W, 8W and 12W LDMOS RF power transistors operating in the 700MHz to 2200MHz frequency band

Infineon has introduced three new unmatched LDMOS RF power transistors. These are targeted at RF power amplifiers operating in the 700MHz to 2200MHz frequency band. Available in 4W, 8W and 12W output power (P1dB) versions, these transistors offer excellent thermal performance, high gain and high efficiency. They are available in an RoHS-compliant 10-pin SON plastic package and are suitable for a wide array of RF power amplifier applications in cellular, industrial, satellite and non-cellular systems.

Part Numbers:
PTFA 220041M V4 - 4W
PTFA 220081M V4 - 8W
PTFA 220121M V4 - 12W

Typical two-tone characteristics

PTMA 220041M, 1840MHz, 28V
- P_out: 4W PEP
- Gain: 19dB
- Efficiency: 37.5dB
- IM: -29dBc

PTMA 220121M, 2140MHz, 28V
- P_out = 9.3W PEP
- Gain: 16.2dB
- Efficiency: 37dB
- IM: -29dBc

Four standard evaluation boards are available:
LTN/PTFA 220041M-9 - tuned at 940MHz
LTN/PTFA 220041M - tuned at 1840MHz
LTN/PTFA 220121M-8 - tuned at 877MHz
LTN/PTFA 220121M - tuned at 2140MHz

Broadband performance 700MHz to 2200MHz Low thermal resistance RoHS-compliant Capable of handling 10:1 VSWR @ 28V, CW output power Integrated EDS protection Evaluation boards available

Cellular RF power amplifiers SATCOM power amplifiers Other communication RF power amplifiers Industrial RF amplifiers