Wireless Communication

New LDMOS RF Power Transistors for 800MHz and 900MHz with Output Power of up to 360W

PTFB093608FV offers the highest peak power for the 869-960MHz frequency band

Infineon has expanded its family of LDMOS RF power transistors to include three new products aimed at Doherty amplifiers for LTE, WCDMA and CDMA applications. The new power transistors offer excellent efficiency, high peak power, and broad video bandwidth. 
They are available with P1dB output power of 150W, 270W and 360W, and feature Infineon's innovative smart discrete packages for highly compact designs.  

Part Numbers:
PTFB093608FV V1 – 360W  (P1dB at 28V)
PTFB082817FH V1 – 270W  (P1dB at 28V)
PTFB091507FH V1 – 150W   (P1dB at 28V) 

PTFB093608FV Typical 1-Carrier WCDMA
Characteristics at 960MHz, 28V, 3G PP signal, channel BW = 3.84MHz, PAR 10dB @ 0.01% CCDF probability:  
- Pout: 112W average  
- Gain: 20dB  
- Efficiency: 34dB  
- ACPR: -36dBc           

PTFB082817FH Typical 1-Carrier WCDMA
Characteristics at 821MHz, 30V, 3G PP signal, channel BW = 3.84MHz, PAR 10dB @ 0.01%
CCDF probability:  
- Pout: 50W average  
- Gain: 19dB  
- Efficiency: 35dB  
- ACPR: -35dBc  





PTFB091507FH FV Typical 1-Carrier WCDMA
Characteristics at 960MHz, 28V, 3G PP signal, channel BW = 3.84MHz, PAR 7.5dB @ 0.01% CCDF probability:  
- Pout: 50W average  
- Gain: 20dB  
- Efficiency: 38dB  
- ACPR: -36dBc  

Each transistor has 
a reference circuit for easy evaluations::  
LTN/PTFB093608FV - tuned at 960MHz
LTN/PTFB082817FH - tuned at 821MHz
LTN/PTFB091507FH - tuned at 960MHz

Designed for Doherty amplifiers High gain, excellent efficiency Smart discrete package enables smaller circuit designs Capable of handling 10:1 VSWR @ 28V, CW output power Integrated ESD protection Reference circuits available

Cellular RF power amplifiers  RF communication, RF power amplifiers  Industrial RF amplifiers