Power Semiconductors
OptiMOS™ 200V and 250V - Perfect Choice for Highest Efficiency
200V and 250V OptiMOS™ Benchmark in RDS(on) and FOMg
We have extended our power conversion MOSFET portfolio with new 200V and 250V OptiMOS™ devices.
OptiMOS™ 200V and 250V devices enable efficiency levels in excess of 95% in 48V power supply rectification stages. This is 2% above the level typically available today, which translates to 30% lower power losses. These technologies offer 50% lower RDS(on) and up to 35% less gate charge (Qg) than alternative devices. Additionally, this family allows system cost improvement through reduced device paralleling, the ability to use smaller heat sinks as a result of the low RDS(on) plus a fast and easy design-in process due to optimized switching behavior.
The outstanding characteristics of the OptiMOS™ 200V and 250V family mean that these devices can replace former bulky D²PAK (9mm x 10mm x 4.5mm) package with slim SuperS08 (5mm x 6mm x 1mm) package. This reduces board space requirements by more than 90% and enables higher power density systems. Additionally, leadless packages like SuperSO8 provide ideal switching behavior and high efficiency levels.
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Power Semiconductors
OptiMOS™ 3 200V and 250V - Setting New Benchmarks
The new OptiMOS™ 3 200V and 250V devices are new additions to Infineon's family of OptiMOS™ 3 low-voltage products at the upper end of the br ...









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