Power Semiconductors
OptiMOS™ in Low-Voltage Drives - Faster, Smaller and More Efficient
Lowest RDS(on) in SuperSO8
Today high power density and high efficiency are the major driving factors in applications like motor control. Moving from TO-220 to SuperSO8 reduces space consumption by 90% and enables a huge power density increase. With 3 times lower parasitic inductance than TO-220, SuperSO8 offers optimal switching performance and the highest levels of system efficiency. Furthermore, spikes in the system can be reduced due to very low parasitics. This minimizes design effort. Reduced switching noise and improved EMI make SuperSO8 an ideal package for high-performance applications.
With up to 100A current capability per device, SuperSO8 is ideal for high-current applications such as motor drives. The large contact area between the lead frame and the board ensures a low thermal resistance. 2 SuperSO8 devices can replace one standard D²PAK with equivalent thermal and electric behavior but a 50% reduction in footprint. Our devices offer the industry's lowest RDS(on) and gate charge across the entire voltage range from 25V up to 250V. These benchmark products in SuperSO8 bring the highest efficiency and power density levels to your system.
| Features | Applications |
|
|

More Information
Power Semiconductors
OptiMOS™ 3 75V - Designed for Synchronous Rectification
The new OptiMOS™ 3 75V family features lowest on-state resistances and superior switching performance. The extremely low on-state resis ...
Power Semiconductors
OptiMOS™ P3 - safe and powerful -30 V P-Channel technology
Infineon presents the new -30 V OptiMOS™ P3 MOSFET generation in power and small signal packages. These best-in-class products set a ne ...
OptiMOS™ in SuperSO8
In applications ...









more






