Power Semiconductors
OptiMOS™ in SuperSO8
In applications such as synchronous rectifiers in SMPS systems, motor drives and DC/DC converters, high power density and high efficiency are the major driving factors. Moving from TO-220 to SuperSO8 reduces space requirements drastically and enables a huge increase in power ...
Power Semiconductors
New OptiMOS™ 25V/30V Family
Our new OptiMOS™ 25V/30V product family increases voltage regulation efficiency by over 93% in power applications.
With the smallest packages (such as CanPAK™1 and S3O8), these new OptiMOS™ products offer ultra-low gate and output charge, combined with lowest on-state resistance. They save overall system costs by reducing the number of phases in multiphase convert ...
Power Semiconductors
2G thinQ!™ Silicon Carbide Schottky Diodes Now Available in TO-220 FullPAK
Silicon Carbide (SiC) is an ideal semiconductor material for power electronic applications, clearly outperforming Si and GaN power devices. Especially in the 600V upwards range, it offers benchmark switching behavior (virtually loss-less) and excellent conduction performance. These properties enable best-in-class efficiency and reduced complexity in SMPS solutions.
In addition, as the d ...
Power Semiconductors
Highest Performance, Efficiency and Reliability in Gate Driver ICs & IGBTs for Induction Heating Cooktops
As market leader in IGBTs, Infineon offers a comprehensive, high-performance portfolio of 600V discrete IGBTs for resonant-switching applications like induction heating cooktops. The portfolio has been developed to provide benchmark performance in terms of switching and conduction losses, ensuring be ...
Power Semiconductors
EiceDRIVER™ - 200V 3-Phase Gate Driver IC for eMobility & Low-Voltage Drives
The EiceDRIVER™ 6ED003L02-F is a 3-phase gate driver IC to control power devices such as IGBTs or MOSFETs in 3-phase systems with a blocking voltage up to 200V. Based on Silicon-On-Insulator (SOI) technology, this device is very resistant to negative transient voltages. Compared with standard m ...
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Infineon präsentiert neue Leistungstransistoren 650-V-CoolMOS C6/E6 für höchste Effizienz und einfache Kontrolle des Schaltverhaltens in Schaltnetzteilen
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Power Semiconductors
Power Semiconductors
Best-in-Class Efficiency with Cost-Effective IGBTs for Induction Heating
As the market leader in IGBTs, Infineon offers a comprehensive, high-performance portfolio for induction heating applications. The latest TRENCHSTOP™ IGBTs from Infineon provide highest system efficiency levels for your applications as well as the best price/performance ratio.
Infineon TRENCHSTOP™ IGBTs can reduce heat sink size by up to 50% and PCB area by 25%. These savings are achie ...
Power Semiconductors
3G thinQ!™ Silicon Carbide Schottky Diodes Make Improved Efficiency More Affordable
Silicon Carbide (SiC) is an ideal semiconductor material for power electronic applications, clearly outperforming Si and GaN power devices. Especially in the 600V upwards range, it offers benchmark switching behavior (virtually loss-less) and excellent conduction performance. These properties enable benchmark efficiency and reduced complexity in SMPS solutions. In addition, as the diameter wafer of ...
Power Semiconductors
600V CoolMOS™ C6 Power MOSFET – Affordable Energy Efficiency from the Market Leader
CoolMOS™ C6 is Infineon's sixth generation of high-voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle. The new CoolMOS™ C6 series combines our experience as the leading SJ MOSFET supplier with best-in-class innovation. The resulting C6 devices provide all the benefits of a fast-switching SJ MOSFET without sacrificing ease of use.
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Power Semiconductors
New OptiMOS™ 3 100 - 150V products reduce RDS(on) by 40%, while delivering excellent switching behavior
The OptiMOS™ 3 family of low-voltage MOSFETs from Infineon Technologies delivers benchmark performance across a wide range of applications. While outperforming standard 150V technologies, the OptiMOS™ 3 120V is the perfect fit for applications that stretch beyond 100V but do not require a 150V MOSFET. At 6mΩ for the 100V device and 19mΩ for the 150V device, this family offers the lowest ...
