Wireless Communication

New LDMOS RF Power Transistors for 800MHz and 900MHz with Output Power of up to 360W

Infineon has expanded its family of LDMOS RF power transistors to include three new products aimed at Doherty amplifiers for LTE, WCDMA and CDMA applications. The new power transistors offer excellent efficiency, high peak power, and broad video bandwidth.
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New 4W, 8W and 12W Unmatched LDMOS RF Power Transistors Offer Broadband Performance from 700MHz to 2200MHz

Infineon has introduced three new unmatched LDMOS RF power transistors. These are targeted at RF power amplifiers operating in the 700MHz to 2200MHz frequency band. Available in 4W, 8W and 12W output power (P1dB) versions, these transistors offer excellent thermal performance, high gain and high efficiency. They are available in an RoHS-compliant 10-pin SON plastic package and are suitable for ...

Wireless Communication

New 240W to 340W LDMOS Transistors for Doherty Amplifiers

Infineon has introduced a family of five new power transistors designed enhanced for use in Doherty amplifier designs. This new family consists of transistors with output power ratings (P1dB) from 150W to 340W and available in the 1800MHz, 1900MHz and 2100MHz frequency bands. Manufactured with Infineon's latest LDMOS process technology, they offer higher gain, higher peak power ...

New LDMOS RF Power Amplifier Family

Infineon has expanded its portfolio of RF power products with a family of 2-stage RF power amplifiers designed for use in today's multi-mode, multi-carrier cellular power amplifiers.These new products are also ideally suited to non-cellular communication designs. Featuring high gain, flat-phase ...

Press Releases

Infineon präsentiert neue Leistungstransistoren 650-V-CoolMOS C6/E6 für höchste Effizienz und einfache Kontrolle des Schaltverhaltens in Schaltnetzteilen