Wireless Communication
New 4W, 8W and 12W Unmatched LDMOS RF Power Transistors Offer Broadband Performance from 700MHz to 2200MHz
Infineon has introduced three new unmatched LDMOS RF power transistors. These are targeted at RF power amplifiers operating in the 700MHz to 2200MHz frequency band. Available in 4W, 8W and 12W output power (P1dB) versions, these transistors offer excellent thermal performance ...
Wireless Communication
New 240W to 340W LDMOS Transistors for Doherty Amplifiers
Infineon has introduced a family of five new power transistors designed enhanced for use in Doherty amplifier designs. This new family consists of transistors with output power ratings (P1dB) from 150W to 340W and available in the 1800MHz, 1900MHz and 2100MHz frequency bands. Manufactured with Infineon's latest LDMOS process technology, they offer higher gain, higher peak power ...
Wireless Communication
New LDMOS RF Power Amplifier Family
Infineon has expanded its portfolio of RF power products with a family of 2-stage RF power amplifiers designed for use in today's multi-mode, multi-carrier cellular power amplifiers.These new products are also ideally suited to non-cellular communication designs. Featuring high gain, flat-phase response and excellent efficiency, these LDMOS power amplifiers are available in ceramic open-cavity ...
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Infineon präsentiert neue Leistungstransistoren 650-V-CoolMOS C6/E6 für höchste Effizienz und einfache Kontrolle des Schaltverhaltens in Schaltnetzteilen
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