Automotive Power

World's Lowest R_DS(on) for Automotive Applications with N-Channel OptiMOS™-T2 30 V MOSFETs

Parallel operation of Power MOSFETs

IPB 180N03S4L-H0 is a n-channel single MOSFET with the lowest R_DS(on) at 0.9 mΩ in a D²PAK-7 standard package. It is automotive-qualified.

OptiMOS™-T2 technologies are designed to withstand 260° C reflow and have lead-free plating for RoHS compliance. Thanks to its advanced trench technology, Infineon delivers products with low gate charge, low capacitance and low switching losses. This takes electrical motor efficiency to new heights, while minimizing EMC emissions.

The IPB 180N03S4L-H0 addresses half-bridge, h-bridge and 3-phase motor control applications. In addition, it enables very high current applications (over 500 A) requiring parallel operation of multiple MOSFETs. IPB 180N03S4L-H0 provides 180 A nominal current, which allows the number of parallel MOSFET's to be reduced, thus optimizing current sharing and cost.

As automotive electric motors move to PWM control to increase efficiency, OptiMOS™-T2 30 V products can also provide reverse battery protection through reverse connection.

Excellent quality and a robust package ensure the performance you have come to expect from Infineon.

Ultra low RDS(on) down to 0.9 mΩ in D²PAK-7 Up to 180A nominal current Optimized gate charge enables smaller driver output stages Excellent figure of merit for switching applications Standard package footprint for easy circuit upgrade Robust package and RoHS compliance

Battery management Energy recovery High-current reverse battery protection Motor control for high-current applications